@misc{oai:repo.qst.go.jp:00066669,
 author = {Hoi, Wong Man and 武山, 昭憲 and 牧野, 高紘 and 大島, 武 and Sasaki, Kohei and Kuramata, Akito and Yamakoshi, Shigenobu and Higashiwaki, Masataka and 武山 昭憲 and 牧野 高紘 and 大島 武},
 month = {Jun},
 note = {Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Recent research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has seen rapid progress. An unexplored area of immense interest is the radiation tolerance of these devices, whose high-voltage and high-temperature capabilities are expected to find applications in extreme radiation environments such as space and nuclear facilities that impose stringent reliability requirements to ensure stable operations. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 metal oxide-semiconductor FETs (MOSFETs). A gamma-ray (γ-ray) tolerance as high as 230 kGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable on-current, on-resistance (RON), and threshold voltage (VT). Radiation-induced degradations in the gate insulation and surface passivation, which could be attributed to dielectric damage and interface trap generation, were found to limit the overall radiation resistance of these devices., 75th Device Research Conference (DRC)},
 title = {Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation},
 year = {2017}
}