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Effect of Beam Flux on Radiation Damage Accumulation in Ion-bomberd Si
https://repo.qst.go.jp/records/54974
https://repo.qst.go.jp/records/54974e1f0c5a9-da8f-4937-8a84-e71596185ac8
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-05 | |||||
| タイトル | ||||||
| タイトル | Effect of Beam Flux on Radiation Damage Accumulation in Ion-bomberd Si | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
南川, 英輝
× 南川, 英輝× 中西, 俊輔× Maekawa, Masaki× 河裾, 厚男× 土田, 秀次× 前川 雅樹× 河裾 厚男 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effects of ion flux on radiation defect production are studied for single crystal silicon bombarded by 6.7 MeV carbon ions. The resultant damage was characterized by X-ray diffraction analysis and positron annihilation Doppler broadening spectroscopy. The results showed that lattice shrinkage occurs after irradiation although the amount of shrinkage decreases with increasing flux at a fixed fluence. This implies that defect concentration is decreased at higher flux. The major defect is identfied as a divacancy. To evaluate this flux effect, we consider the flux dependence of defect recombination by defect reaction rate theory. The calculation suggests that the experimental results can be explained by considering the flux effect on the defect recombination process except thermal annealing. This suggests that the reaction rate constant varies by ion flux i.e., the rate of displacements per atom. | |||||
| 書誌情報 |
JJAP Conference Proceedings 巻 7, p. 011101, 発行日 2018-12 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/JJAPCP.7.011101 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://journals.jsap.jp/jjapproceedings/online/7-011101 | |||||
| 関連名称 | https://journals.jsap.jp/jjapproceedings/online/7-011101 | |||||
