@inproceedings{oai:repo.qst.go.jp:00054974,
 author = {南川, 英輝 and 中西, 俊輔 and Maekawa, Masaki and 河裾, 厚男 and 土田, 秀次 and 前川 雅樹 and 河裾 厚男},
 book = {JJAP Conference Proceedings},
 month = {Dec},
 note = {The effects of ion flux on radiation defect production are studied for single crystal silicon bombarded by 6.7 MeV carbon ions. The resultant damage was characterized by X-ray diffraction analysis and positron annihilation Doppler broadening spectroscopy. The results showed that lattice shrinkage occurs after irradiation although the amount of shrinkage decreases with increasing flux at a fixed fluence. This implies that defect concentration is decreased at higher flux. The major defect is identfied as a divacancy. To evaluate this flux effect, we consider the flux dependence of defect recombination by defect reaction rate theory. The calculation suggests that the experimental results can be explained by considering the flux effect on the defect recombination process except thermal annealing. This suggests that the reaction rate constant varies by ion flux i.e., the rate of displacements per atom.},
 title = {Effect of Beam Flux on Radiation Damage Accumulation in Ion-bomberd Si},
 volume = {7},
 year = {2018}
}