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Single-Event Damages observed in Gallium Nitride (GaN) HEMTs for Power Handling Applications
https://repo.qst.go.jp/records/54873
https://repo.qst.go.jp/records/54873556e8de9-4a2c-4543-bc3c-bf9c9d8c4474
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-03-23 | |||||
| タイトル | ||||||
| タイトル | Single-Event Damages observed in Gallium Nitride (GaN) HEMTs for Power Handling Applications | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Mizuta, E.
× Mizuta, E.× Kuboyama, S.× Nakada, Y.× Takeyama, A.× Ohshima, T.× 武山 昭憲× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The single-event damages observed in commercially available AlGaN/GaN High Electron Mobility Transistors (HEMTs) were investigated. For power handling applications, normally–off operation is achieved by p-type GaN gate material and its rated drain–source voltage is 600 V. Because of no gate insulator, Single-Event Gate Rupture (SEGR) is essentially excluded. Therefore, it is expected to exhibit better immunity to heavy ions in comparison with Si or SiC power MOSFETs. In the test results, two types of failure modes were observed with different leakage current paths; most failures were caused by an introduction of leakage current path between the drain and the substrate via buffer layer. | |||||
| 書誌情報 |
RADECS 2017 Proceedings 発行日 2018-03 |
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