@inproceedings{oai:repo.qst.go.jp:00054873,
 author = {Mizuta, E. and Kuboyama, S. and Nakada, Y. and Takeyama, A. and Ohshima, T. and 武山 昭憲 and 大島 武},
 book = {RADECS 2017 Proceedings},
 month = {Mar},
 note = {The single-event damages observed in commercially available AlGaN/GaN High Electron Mobility Transistors (HEMTs) were investigated. For power handling applications, normally–off operation is achieved by p-type GaN gate material and its rated drain–source voltage is 600 V. Because of no gate insulator, Single-Event Gate Rupture (SEGR) is essentially excluded. Therefore, it is expected to exhibit better immunity to heavy ions in comparison with Si or SiC power MOSFETs. In the test results, two types of failure modes were observed with different leakage current paths; most failures were caused by an introduction of leakage current path between the drain and the substrate via buffer layer.},
 title = {Single-Event Damages observed in Gallium Nitride (GaN) HEMTs for Power Handling Applications},
 year = {2018}
}