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Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
https://repo.qst.go.jp/records/49621
https://repo.qst.go.jp/records/496217a3b9278-d737-4284-b29d-e1c74b0ad8dc
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-13 | |||||
| タイトル | ||||||
| タイトル | Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
山崎, 雄一
× 山崎, 雄一× 千葉, 陽史× 牧野, 高紘× 佐藤, 真一郎× 山田, 尚人× 佐藤, 隆博× 土方, 泰斗× 児嶋, 一聡× -Y., Lee S.× 大島, 武× 山崎 雄一× 千葉 陽史× 牧野 高紘× 佐藤 真一郎× 山田 尚人× 佐藤 隆博× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (VSis) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable VSi without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from VSi on H1 fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each VSi introduced by PBW. The results suggest that further improvement in the VSi creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using VSi. | |||||
| 書誌情報 |
Journal of Materials Research 巻 33, 号 20, p. 3355-3361, 発行日 2018-09 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1557/jmr.2018.302 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.cambridge.org/core/journals/journal-of-materials-research/article/electrically-controllable-positioncontrolled-color-centers-created-in-sic-pn-junction-diode-by-proton-beam-writing/C19166678A06F6668687CCC000928EB1 | |||||
| 関連名称 | https://www.cambridge.org/core/journals/journal-of-materials-research/article/electrically-controllable-positioncontrolled-color-centers-created-in-sic-pn-junction-diode-by-proton-beam-writing/C19166678A06F6668687CCC000928EB1 | |||||
