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Recovery from radiation-induced degradation in InGaP solar cells by light soaking
https://repo.qst.go.jp/records/49336
https://repo.qst.go.jp/records/49336bd1158c7-a443-4ea3-800e-6242a23419db
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-11-09 | |||||
| タイトル | ||||||
| タイトル | Recovery from radiation-induced degradation in InGaP solar cells by light soaking | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Shibata, Yuichi
× Shibata, Yuichi× Imaizumi, Mitsuru× Sato, Shinichiro× Ohshima, Takeshi× Akiyoshi, Masafumi× Okuda, Shuichi× Sato, Shinichiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In this paper, we report that InGaP solar cells irradiated with electrons exhibit a significant recovery of open-circuit voltage after AM0 light soaking. The soaking-light intensity dependence of defect reduction and the change in the carrier concentration profile upon light soaking suggests that the recombination of photogenerated carriers contributes to the recovery. Because 0.2MeV electrons are only responsible for phosphorus recoil in InGaP, the absence of correlation between the activation energy for voltage recovery and the electron irradiation energies of 0.2, 0.4, and 1MeV implies that the annihilation of radiation-induced phosphorus-related defects contributes to the recovery. | |||||
| 書誌情報 |
Applied Physics Express 巻 11, 号 12, p. 122301-1-122301-4, 発行日 2018-11 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1882-0778 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/APEX.11.122301 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.7567/APEX.11.122301 | |||||
