@article{oai:repo.qst.go.jp:00049336,
 author = {Shibata, Yuichi and Imaizumi, Mitsuru and Sato, Shinichiro and Ohshima, Takeshi and Akiyoshi, Masafumi and Okuda, Shuichi and Sato, Shinichiro and Ohshima, Takeshi},
 issue = {12},
 journal = {Applied Physics Express},
 month = {Nov},
 note = {In this paper, we report that InGaP solar cells irradiated with electrons exhibit a significant recovery of open-circuit voltage after AM0 light soaking. The soaking-light intensity dependence of defect reduction and the change in the carrier concentration profile upon light soaking suggests that the recombination of photogenerated carriers contributes to the recovery. Because 0.2MeV electrons are only responsible for phosphorus recoil in InGaP, the absence of correlation between the activation energy for voltage recovery and the electron irradiation energies of 0.2, 0.4, and 1MeV implies that the annihilation of radiation-induced phosphorus-related defects contributes to the recovery.},
 pages = {122301-1--122301-4},
 title = {Recovery from radiation-induced degradation in InGaP solar cells by light soaking},
 volume = {11},
 year = {2018}
}