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Various Single Photon Sources Observed in SiC pin Diodes
https://repo.qst.go.jp/records/49331
https://repo.qst.go.jp/records/493316b9242ad-1950-40c9-acea-2126472dada7
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-07-18 | |||||
タイトル | ||||||
タイトル | Various Single Photon Sources Observed in SiC pin Diodes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Tsunemi, Hiroki
× Tsunemi, Hiroki× Honda, Tomoya× Makino, Takahiro× Onoda, Shinobu× Sato, Shinichiro× Hijikata, Yasuto× Ohshima, Takeshi× Tsunemi, Hiroki× Makino, Takahiro× Onoda, Shinobu× Sato, Shinichiro× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The location dependence of the observed surface SPSs indicates that the oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions had an effect. The peak wavelength of luminescence spectra widely varies depending on their locations, indicating lattice strain introduced by the oxide layer has the potential to affect the luminescence spectra. |
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書誌情報 |
Materials Science Forum 巻 924, p. 204-207, 発行日 2018-06 |
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出版者 | ||||||
出版者 | Trans Tech Publications | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.924.204 |