@article{oai:repo.qst.go.jp:00049331,
 author = {Tsunemi, Hiroki and Honda, Tomoya and Makino, Takahiro and Onoda, Shinobu and Sato, Shinichiro and Hijikata, Yasuto and Ohshima, Takeshi and Tsunemi, Hiroki and Makino, Takahiro and Onoda, Shinobu and Sato, Shinichiro and Ohshima, Takeshi},
 journal = {Materials Science Forum},
 month = {Jun},
 note = {4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The location
dependence of the observed surface SPSs indicates that the oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions had an effect. The peak wavelength of luminescence spectra widely varies depending on their locations, indicating
lattice strain introduced by the oxide layer has the potential to affect the luminescence spectra.},
 pages = {204--207},
 title = {Various Single Photon Sources Observed in SiC pin Diodes},
 volume = {924},
 year = {2018}
}