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Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing
https://repo.qst.go.jp/records/49309
https://repo.qst.go.jp/records/493090671e5c4-82cb-4cb8-855a-330802394fdd
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-18 | |||||
| タイトル | ||||||
| タイトル | Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Fukuda, Ryosuke
× Fukuda, Ryosuke× Balasubramanian, Priyadharshini× Higashimata, Itaru× Koike, Godai× Okada, Takuma× Kagami, Risa× Teraji, Tokuyuki× Onoda, Shinobu× Haruyama, Moriyoshi× Yamada, Keisuke× Inaba, Masafumi× Yamano, Hayate× M, Stürner Felix× Schmitt, Simon× P, McGuinness Liam× Jelezko, Fedor× Ohshima, Takeshi× Shinada, Takahiro× Kawarada, Hiroshi× Kada, Wataru× Osamu, Hanaizumi× Takashi, Tanii× Isoya, Junichi× 福田 諒介× 小野田 忍× 春山 盛善× 大島 武× 加田 渉 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution. | |||||
| 書誌情報 |
New Journal of Physics 巻 20, 号 8, p. 083029, 発行日 2018-08 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1088/1367-2630/aad997 | |||||
