@article{oai:repo.qst.go.jp:00049309,
 author = {Fukuda, Ryosuke and Balasubramanian, Priyadharshini and Higashimata, Itaru and Koike, Godai and Okada, Takuma and Kagami, Risa and Teraji, Tokuyuki and Onoda, Shinobu and Haruyama, Moriyoshi and Yamada, Keisuke and Inaba, Masafumi and Yamano, Hayate and M, Stürner Felix and Schmitt, Simon and P, McGuinness Liam and Jelezko, Fedor and Ohshima, Takeshi and Shinada, Takahiro and Kawarada, Hiroshi and Kada, Wataru and Osamu, Hanaizumi and Takashi, Tanii and Isoya, Junichi and 福田 諒介 and 小野田 忍 and 春山 盛善 and 大島 武 and 加田 渉},
 issue = {8},
 journal = {New Journal of Physics},
 month = {Aug},
 note = {The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.},
 title = {Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing},
 volume = {20},
 year = {2018}
}