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First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure
https://repo.qst.go.jp/records/49231
https://repo.qst.go.jp/records/49231f9226794-64b6-482f-88b7-7a7f450d2b3d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-11-01 | |||||
| タイトル | ||||||
| タイトル | First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Matsushita, Y.
× Matsushita, Y.× Furukawa, Y.× Hijikata, Y.× Ohshima, Takeshi× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | First-principles calculations clarify the electronic states of oxygen-related defects in the 4HSiC bulk and on the 4H-SiC surface and how they are affected by the surface amorphous structure due to oxidation. In previous experimental studies, it was reported that thermally oxidized 4H-SiC contains an abundant amount of single photon sources on its surface (surface SPSs) and that their emitting wavelengths have variance. However, the microscopic mechanism has not yet been clarified. In this study, it is demonstrated that the energy levels of the oxygen related defects on the surface are altered sensitively by the local atomic structure of the amorphous surface leading to variations in the wavelengths. | |||||
| 書誌情報 |
Applied Surface Science 巻 464, p. 451-454, 発行日 2019-01 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.apsusc.2018.09.072 | |||||
