{"created":"2023-05-15T14:38:09.326128+00:00","id":49231,"links":{},"metadata":{"_buckets":{"deposit":"360ad083-e5d4-483e-a82b-5a7a561122b9"},"_deposit":{"created_by":1,"id":"49231","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49231"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049231","sets":["1"]},"author_link":["496713","496714","496715","496716","496717"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"454","bibliographicPageStart":"451","bibliographicVolumeNumber":"464","bibliographic_titles":[{"bibliographic_title":"Applied Surface Science"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"First-principles calculations clarify the electronic states of oxygen-related defects in the 4HSiC bulk and on the 4H-SiC surface and how they are affected by the surface amorphous structure due to oxidation. In previous experimental studies, it was reported that thermally oxidized 4H-SiC contains an abundant amount of single photon sources on its surface (surface SPSs) and that their emitting wavelengths have variance. However, the microscopic mechanism has not yet been clarified. In this study, it is demonstrated that the energy levels of the oxygen related defects on the surface are altered sensitively by the local atomic structure of the amorphous surface leading to variations in the wavelengths.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.apsusc.2018.09.072","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Matsushita, Y."}],"nameIdentifiers":[{"nameIdentifier":"496713","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Furukawa, Y."}],"nameIdentifiers":[{"nameIdentifier":"496714","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Y."}],"nameIdentifiers":[{"nameIdentifier":"496715","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"496716","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"496717","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-01"},"publish_date":"2018-11-01","publish_status":"0","recid":"49231","relation_version_is_last":true,"title":["First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:20:32.351208+00:00"}