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Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC
https://repo.qst.go.jp/records/49127
https://repo.qst.go.jp/records/491276b6e7dfe-18ff-49a6-9198-306520f8549d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-02 | |||||
| タイトル | ||||||
| タイトル | Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ivády, Viktor
× Ivády, Viktor× Davidsson, Joel× Tien, Son Nguyen× Ohshima, Takeshi× A., Abrikosov Igor× Gali, Adam× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Point defects in wide band gap semiconductors have outstanding potential for implementing room temperature quantum bits and single photon emitters. Silicon vacancy related color centers in 4H, 6H, and 15R-SiC are among the most studied quantum bits. The microscopic structures of these defects have been recently identified as isolated negatively charged silicon vacancy defects at the symmetrically non-equivalent silicon sites in SiC. In this study, high precision ab initio simulations on negatively charged silicon vacancies in 4H and 6H-SiC were done. The most important magneto-optical data, such as the zero-phonon photoluminescence energies, the zero-field-splitting, and the hyperfine tensors for the nearest and farther nuclear spins were estimated. | |||||
| 書誌情報 |
Materials Science Forum 巻 924, p. 895-900, 発行日 2018-06 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.924.895 | |||||
