{"created":"2023-05-15T14:38:04.763344+00:00","id":49127,"links":{},"metadata":{"_buckets":{"deposit":"532b7499-4fd1-494d-90aa-f6f3362f7be9"},"_deposit":{"created_by":1,"id":"49127","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49127"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049127","sets":["1"]},"author_link":["495629","495632","495630","495635","495633","495631","495634"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"900","bibliographicPageStart":"895","bibliographicVolumeNumber":"924","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Point defects in wide band gap semiconductors have outstanding potential for implementing room temperature quantum bits and single photon emitters. Silicon vacancy related color centers in 4H, 6H, and 15R-SiC are among the most studied quantum bits. The microscopic structures of these defects have been recently identified as isolated negatively charged silicon vacancy defects at the symmetrically non-equivalent silicon sites in SiC. In this study, high precision ab initio simulations on negatively charged silicon vacancies in 4H and 6H-SiC were done. The most important magneto-optical data, such as the zero-phonon photoluminescence energies, the zero-field-splitting, and the hyperfine tensors for the nearest and farther nuclear spins were estimated.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.924.895","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ivády, Viktor"}],"nameIdentifiers":[{"nameIdentifier":"495629","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Davidsson, Joel"}],"nameIdentifiers":[{"nameIdentifier":"495630","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tien, Son Nguyen"}],"nameIdentifiers":[{"nameIdentifier":"495631","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"495632","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"A., Abrikosov Igor"}],"nameIdentifiers":[{"nameIdentifier":"495633","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gali, Adam"}],"nameIdentifiers":[{"nameIdentifier":"495634","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495635","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-02"},"publish_date":"2018-08-02","publish_status":"0","recid":"49127","relation_version_is_last":true,"title":["Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:21:03.128963+00:00"}