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Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
https://repo.qst.go.jp/records/49126
https://repo.qst.go.jp/records/4912621324dff-66de-420f-b8f6-593aad1f817d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-14 | |||||
| タイトル | ||||||
| タイトル | Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Abe, Yuta
× Abe, Yuta× Umeda, Takahide× Okamoto, Mitsuo× Onoda, Shinobu× Haruyama, Moriyoshi× Kada, Wataru× Hanaizumi, Osamu× Kosugi, Ryoji× Harada, Shinsuke× Ohshima, Takeshi× 小野田 忍× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using confocal microscope techniques. It was found that SPSs appeared only at 4H-SiC/SiO2 interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not have SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and as a result, it can be concluded that the formation of the SPSs strongly depended on the preparation conditions of SiC/SiO2 interfaces. | |||||
| 書誌情報 |
Materials Science Forum 巻 924, p. 281-284, 発行日 2018-06 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.924.281 | |||||
