{"created":"2023-05-15T14:38:04.718963+00:00","id":49126,"links":{},"metadata":{"_buckets":{"deposit":"ab8e17b5-aae1-4270-a65f-bf004b533642"},"_deposit":{"created_by":1,"id":"49126","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49126"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049126","sets":["1"]},"author_link":["723747","723757","723752","723748","723749","723753","723755","723754","723750","723756","723751","723758"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"284","bibliographicPageStart":"281","bibliographicVolumeNumber":"924","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using confocal microscope techniques. It was found that SPSs appeared only at 4H-SiC/SiO2 interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not have SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and as a result, it can be concluded that the formation of the SPSs strongly depended on the preparation conditions of SiC/SiO2 interfaces.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.924.281","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Abe, Yuta"}],"nameIdentifiers":[{"nameIdentifier":"723747","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeda, Takahide"}],"nameIdentifiers":[{"nameIdentifier":"723748","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okamoto, Mitsuo"}],"nameIdentifiers":[{"nameIdentifier":"723749","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{"nameIdentifier":"723750","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Haruyama, Moriyoshi"}],"nameIdentifiers":[{"nameIdentifier":"723751","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kada, Wataru"}],"nameIdentifiers":[{"nameIdentifier":"723752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hanaizumi, Osamu"}],"nameIdentifiers":[{"nameIdentifier":"723753","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kosugi, Ryoji"}],"nameIdentifiers":[{"nameIdentifier":"723754","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Harada, Shinsuke"}],"nameIdentifiers":[{"nameIdentifier":"723755","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"723756","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"723757","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"723758","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-02-14"},"publish_date":"2019-02-14","publish_status":"0","recid":"49126","relation_version_is_last":true,"title":["Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:29:40.273064+00:00"}