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Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride
https://repo.qst.go.jp/records/49124
https://repo.qst.go.jp/records/491241092b01f-f31c-4fd6-a6d2-c7096643d68d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-02 | |||||
| タイトル | ||||||
| タイトル | Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ngoc, My Duong Hanh
× Ngoc, My Duong Hanh× Anh, Phan Nguyen Minh× Kianinia, Mehran× Ohshima, Takeshi× Abe, Hiroshi× Watanabe, Kenji× Taniguchi, Takashi× H., Edgar James× Aharonovich, Igor× Toth, Milos× 大島 武× 阿部 浩之 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | High-energy (MeV) electron irradiation was carried out as a means to generate stable single photon emitters (SPEs) in Hexagonal boron nitride (hBN). Four types of exfoliated hBN flakes namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material were usd in this study. As a result, we found that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. |
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| 書誌情報 |
ACS Applied Materials and Interfaces 巻 10, p. 24886-24891, 発行日 2018-06 |
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| 出版者 | ||||||
| 出版者 | ACS publications | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1021/acsami.8b07506 | |||||
