@article{oai:repo.qst.go.jp:00049124,
 author = {Ngoc, My Duong Hanh and Anh, Phan Nguyen Minh and Kianinia, Mehran and Ohshima, Takeshi and Abe, Hiroshi and Watanabe, Kenji and Taniguchi, Takashi and H., Edgar James and Aharonovich, Igor and Toth, Milos and 大島 武 and 阿部 浩之},
 journal = {ACS Applied Materials and Interfaces},
 month = {Jun},
 note = {High-energy (MeV) electron irradiation was carried out as a means to generate stable single photon emitters (SPEs) in Hexagonal boron nitride (hBN). Four types of exfoliated hBN flakes namely, high-purity multilayers, isotopically pure
hBN, carbon-rich hBN multilayers and monolayered material were usd in this study.  As a result, we found that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure.},
 pages = {24886--24891},
 title = {Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride},
 volume = {10},
 year = {2018}
}