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Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
https://repo.qst.go.jp/records/48905
https://repo.qst.go.jp/records/4890522acfa5a-343d-493c-98db-49d44b8fbbd6
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-05-08 | |||||
| タイトル | ||||||
| タイトル | Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hoi, Wong Man
× Hoi, Wong Man× 武山, 昭憲× 牧野, 高紘× 大島, 武× Sasaki, Kohei× Kuramata, Akito× Yamakoshi, Shigenobu× 武山 昭憲× 牧野 高紘× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs’ output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices. |
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| 書誌情報 |
APPLIED PHYSICS LETTERS 巻 112, 号 023503, p. 023503-1-023503-5, 発行日 2018-05 |
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| 出版者 | ||||||
| 出版者 | American institute of physics | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5017810 | |||||
