{"_buckets": {"deposit": "2e9dcdcc-2383-4fee-80c6-79fac03a8c13"}, "_deposit": {"created_by": 1, "id": "48905", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "48905"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00048905", "sets": ["1"]}, "author_link": ["492698", "492695", "492703", "492696", "492697", "492701", "492700", "492702", "492704", "492699"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "023503", "bibliographicPageEnd": "023503-5", "bibliographicPageStart": "023503-1", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated\nfor the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs’ output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer\ncharacteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to\ndielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American institute of physics"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.5017810", "subitem_relation_type_select": "DOI"}}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hoi, Wong Man"}], "nameIdentifiers": [{"nameIdentifier": "492695", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "武山, 昭憲"}], "nameIdentifiers": [{"nameIdentifier": "492696", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "牧野, 高紘"}], "nameIdentifiers": [{"nameIdentifier": "492697", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大島, 武"}], "nameIdentifiers": [{"nameIdentifier": "492698", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sasaki, Kohei"}], "nameIdentifiers": [{"nameIdentifier": "492699", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kuramata, Akito"}], "nameIdentifiers": [{"nameIdentifier": "492700", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakoshi, Shigenobu"}], "nameIdentifiers": [{"nameIdentifier": "492701", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "武山 昭憲", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "492702", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "牧野 高紘", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "492703", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大島 武", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "492704", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/48905", "pubdate": {"attribute_name": "公開日", "attribute_value": "2018-05-08"}, "publish_date": "2018-05-08", "publish_status": "0", "recid": "48905", "relation": {}, "relation_version_is_last": true, "title": ["Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation"], "weko_shared_id": -1}