@article{oai:repo.qst.go.jp:00048905,
 author = {Hoi, Wong Man and 武山, 昭憲 and 牧野, 高紘 and 大島, 武 and Sasaki, Kohei and Kuramata, Akito and Yamakoshi, Shigenobu and 武山 昭憲 and 牧野 高紘 and 大島 武},
 issue = {023503},
 journal = {APPLIED PHYSICS LETTERS},
 month = {May},
 note = {The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated
for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs’ output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer
characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to
dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.},
 pages = {023503-1--023503-5},
 title = {Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation},
 volume = {112},
 year = {2018}
}