WEKO3
アイテム
Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
https://repo.qst.go.jp/records/48750
https://repo.qst.go.jp/records/487504a83569e-ad79-412e-a0e1-cb6212d8bea0
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-04-19 | |||||
| タイトル | ||||||
| タイトル | Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Abe, Y.
× Abe, Y.× Umeda, T.× Okamoto, M.× Kosugi, R.× Harada, S.× Haruyama, Moriyoshi× Kada, W.× Hanaizumi, O.× Onoda, Shinobu× Ohshima, Takeshi× 春山 盛善× 加田 渉× 小野田 忍× 大島 武 |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor fieldeffect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET. | |||||
| 書誌情報 |
Applied Physics Letters 巻 112, 号 3, p. 031105-1-031105-5, 発行日 2018-01 |
|||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.4994241 | |||||
