@article{oai:repo.qst.go.jp:00048750,
 author = {Abe, Y. and Umeda, T. and Okamoto, M. and Kosugi, R. and Harada, S. and Haruyama, Moriyoshi and Kada, W. and Hanaizumi, O. and Onoda, Shinobu and Ohshima, Takeshi and 春山 盛善 and 加田 渉 and 小野田 忍 and 大島 武},
 issue = {3},
 journal = {Applied Physics Letters},
 month = {Jan},
 note = {We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor fieldeffect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.},
 pages = {031105-1--031105-5},
 title = {Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors},
 volume = {112},
 year = {2018}
}