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Creation and Functionalization of Defects in SiC by Proton Beam Writing
https://repo.qst.go.jp/records/48728
https://repo.qst.go.jp/records/4872832bb1e63-3820-4925-b6ad-41bdf2a27f9e
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-04-15 | |||||
| タイトル | ||||||
| タイトル | Creation and Functionalization of Defects in SiC by Proton Beam Writing | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ohshima, Takeshi
× Ohshima, Takeshi× Honda, Tomoya× Onoda, Shinobu× Makino, Takahiro× Haruyama, Moriyoshi× Kamiya, Tomihiro× Sato, Takahiro× Hijikata, Yasuto× Kada, Wataru× Hanaizumi, Osamu× Lohrmann, A.× R., Klein J.× C., Johnson B.× C., McCallum J.× Castelletto, S.× C., Gibson B.× Kraus, H.× Dyakonov, V.× V., Astakhov G.× 大島 武× 本多 智也× 小野田 忍× 牧野 高紘× 春山 盛善× 佐藤 隆博 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. Since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits. |
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| 書誌情報 |
Materials Science Forum 巻 897, p. 233-237, 発行日 2017-06 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.897.233 | |||||
