@article{oai:repo.qst.go.jp:00048728,
 author = {Ohshima, Takeshi and Honda, Tomoya and Onoda, Shinobu and Makino, Takahiro and Haruyama, Moriyoshi and Kamiya, Tomihiro and Sato, Takahiro and Hijikata, Yasuto and Kada, Wataru and Hanaizumi, Osamu and Lohrmann, A. and R., Klein J. and C., Johnson B. and C., McCallum J. and Castelletto, S. and C., Gibson B. and Kraus, H. and Dyakonov, V. and V., Astakhov G. and 大島 武 and 本多 智也 and 小野田 忍 and 牧野 高紘 and 春山 盛善 and 佐藤 隆博},
 journal = {Materials Science Forum},
 month = {Jun},
 note = {Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation
 annealing. The overall depth profile of photon counts detected from irradiated
areas is in good agreement with simulated vacancy depth profile. Since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits.},
 pages = {233--237},
 title = {Creation and Functionalization of Defects in SiC by Proton Beam Writing},
 volume = {897},
 year = {2017}
}