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Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
https://repo.qst.go.jp/records/48712
https://repo.qst.go.jp/records/48712bd12e75d-1678-4450-a7c4-42dbafe4916c
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-04-12 | |||||
| タイトル | ||||||
| タイトル | Scalable Quantum Photonics with Single Color Centers in Silicon Carbide | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Radulaski, Marina
× Radulaski, Marina× Widmann, Matthias× Niethammer, Matthias× Linda, Zhang Jingyuan× Lee, Sang-Yun× Rendler, Torsten× G., Lagoudakis Konstantinos× Tien, Son Nguyen× Janzeen, Erik× Ohshima, Takeshi× Wrachtrup, Jorg× Vuckovicc, Jelena× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A scalable array of nanopillars incorporating single silicon vacancy centers is developed in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electrons to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400−1400 nm diameters. High collection efficiency of up to 22 kcounts/s optical saturation rates was observed from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits. | |||||
| 書誌情報 |
Nano Letters 巻 17, 号 3, p. 1782-1786, 発行日 2017-02 |
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| 出版者 | ||||||
| 出版者 | American Chemical Society | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1021/acs.nanolett.6b05102 | |||||
