@article{oai:repo.qst.go.jp:00048712,
 author = {Radulaski, Marina and Widmann, Matthias and Niethammer, Matthias and Linda, Zhang Jingyuan and Lee, Sang-Yun and Rendler, Torsten and G., Lagoudakis Konstantinos and Tien, Son Nguyen and Janzeen, Erik and Ohshima, Takeshi and Wrachtrup, Jorg and Vuckovicc, Jelena and 大島 武},
 issue = {3},
 journal = {Nano Letters},
 month = {Feb},
 note = {A scalable array of nanopillars incorporating single silicon vacancy centers is developed in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electrons to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400−1400 nm diameters. High collection efficiency of up to 22 kcounts/s optical saturation rates was observed from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.},
 pages = {1782--1786},
 title = {Scalable Quantum Photonics with Single Color Centers in Silicon Carbide},
 volume = {17},
 year = {2017}
}