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Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction
https://repo.qst.go.jp/records/48456
https://repo.qst.go.jp/records/484568d850d6e-cb15-485b-9137-d4bad6bcf0f3
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-02-06 | |||||
タイトル | ||||||
タイトル | Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
佐々木, 拓生
× 佐々木, 拓生× 高橋, 正光× 佐々木 拓生× 高橋 正光 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A high In/Ga supply ratio results in strong size inhomogeneity of Au particles and interrupts the nanowire growth at a certain point of time. Based on the experimental results, we discussed the state of Au catalysts with high indium content during the nanowire growth. We found that a growth temperature below the eutectic temperature is essential to avoid the growth interruption and maintain the nanowire growth. The high In/Ga ratio necessitates accurate size control of Au particles before growth for further improvement of the nanowire growth. | |||||
書誌情報 |
Journal of Crystal Growth 巻 468, p. 135-138, 発行日 2017-06 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-0248 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.jcrysgro.2016.11.113 | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1016/j.jcrysgro.2016.11.113 | |||||
関連名称 | http://dx.doi.org/10.1016/j.jcrysgro.2016.11.113 |