{"created":"2023-05-15T14:37:33.871929+00:00","id":48456,"links":{},"metadata":{"_buckets":{"deposit":"fc6241f0-f100-460f-a315-51279a54a257"},"_deposit":{"created_by":1,"id":"48456","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"48456"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00048456","sets":["1"]},"author_link":["487183","487184","487185","487182"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"138","bibliographicPageStart":"135","bibliographicVolumeNumber":"468","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A high In/Ga supply ratio results in strong size inhomogeneity of Au particles and interrupts the nanowire growth at a certain point of time. Based on the experimental results, we discussed the state of Au catalysts with high indium content during the nanowire growth. We found that a growth temperature below the eutectic temperature is essential to avoid the growth interruption and maintain the nanowire growth. The high In/Ga ratio necessitates accurate size control of Au particles before growth for further improvement of the nanowire growth.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jcrysgro.2016.11.113","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://dx.doi.org/10.1016/j.jcrysgro.2016.11.113"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1016/j.jcrysgro.2016.11.113","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"487182","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"487183","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487184","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487185","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-06"},"publish_date":"2018-02-06","publish_status":"0","recid":"48456","relation_version_is_last":true,"title":["Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:27:53.046022+00:00"}