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Charge multiplication effect in thin diamond films
https://repo.qst.go.jp/records/47737
https://repo.qst.go.jp/records/4773731f1812d-9b20-4238-94d2-427c51548b86
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-04-20 | |||||
タイトル | ||||||
タイトル | Charge multiplication effect in thin diamond films | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Skukan, N.
× Skukan, N.× Grilj, V.× Sudic, I.× Pomorski, M.× Kada, W.× Makino, Takahiro× Kambayashi, Y.× Ando, Yushi× Onoda, Shinobu× Sato, Shinichiro× Oshima, Takeshi× Kamiya, Tomihiro× Jaksic, M.× 牧野 高紘× 安藤 裕士× 小野田 忍× 佐藤 真一郎× 大島 武× 神谷 富裕 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly bserved in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detectors with extreme radiation hardness. | |||||
書誌情報 |
Applied Physics Letters 巻 109, 号 4, p. 043502-1-043502-5, 発行日 2016-07 |
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出版者 | ||||||
出版者 | AIP Publishing | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.4959863 |