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Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs
https://repo.qst.go.jp/records/47724
https://repo.qst.go.jp/records/4772457ac15e9-11d2-4fab-8cef-4143f329cefc
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-04-20 | |||||
タイトル | ||||||
タイトル | Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kobayashi, Y.
× Kobayashi, Y.× Yokozeki, T.× Matsuda, Takuma× Mitomo, Satoshi× Murata, Koichi× Hachisuka, M.× Kaneko, Y.× Makino, Takahiro× Takeyama, Akinori× Onoda, Shinobu× Oshima, Takeshi× Tanaka, Y.× Kandori, M.× Yoshie, T.× Hijikata, Y.× 松田 拓磨× 三友 啓× 村田 航一× 牧野 高紘× 武山 昭憲× 小野田 忍× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Gamma-ray irradiation effects on motor-driver circuits composed of 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) under motor driving with different Pulse-Width-Modulation (PWM) frequencies were investigated. In the case of PWM frequency at 10 kHz, the driving current and voltage waveforms were normal beyond the irradiation exceeded 1.1 MGy. In addition, the motor was still rotating in this total dose. We compared the radiation responses of SiC MOSFETs between the cases of driving states and no bias. The drain current – gate voltage characteristics with no bias shifted to the negative voltage side wider than the driving states. Also the leakage current in the case of driving state is fewer than that of no bias. |
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書誌情報 |
Materials Science Forum 巻 858, p. 868-871, 発行日 2016-05 |
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出版者 | ||||||
出版者 | Trans Tech Publications, Switzerland | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.858.868 |