@article{oai:repo.qst.go.jp:00047724,
 author = {Kobayashi, Y. and Yokozeki, T. and Matsuda, Takuma and Mitomo, Satoshi and Murata, Koichi and Hachisuka, M. and Kaneko, Y. and Makino, Takahiro and Takeyama, Akinori and Onoda, Shinobu and Oshima, Takeshi and Tanaka, Y. and Kandori, M. and Yoshie, T. and Hijikata, Y. and 松田 拓磨 and 三友 啓 and 村田 航一 and 牧野 高紘 and 武山 昭憲 and 小野田 忍 and 大島 武},
 journal = {Materials Science Forum},
 month = {May},
 note = {Gamma-ray irradiation effects on motor-driver circuits composed of 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) under motor driving with different Pulse-Width-Modulation (PWM) frequencies were investigated. In the case of PWM frequency at 10 kHz, the driving current and voltage waveforms were normal beyond the irradiation exceeded 1.1 MGy. In addition, the motor was still rotating in this total dose. We compared the radiation
responses of SiC MOSFETs between the cases of driving states and no bias. The drain current – gate voltage characteristics with no bias shifted to the negative voltage side wider than the driving states. Also the leakage current in the case of driving state is fewer than that of no bias.},
 pages = {868--871},
 title = {Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs},
 volume = {858},
 year = {2016}
}