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Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions
https://repo.qst.go.jp/records/47627
https://repo.qst.go.jp/records/4762785e6d742-d08d-4f74-a64d-3f7e54a230d2
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-01-30 | |||||
| タイトル | ||||||
| タイトル | Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
武山, 昭憲
× 武山, 昭憲× 松田, 拓磨× 横関, 貴史× 三友, 啓× 村田, 航一× 牧野, 高紘× 小野田, 忍× 大久保, 秀一× 田中, 雄季× 神取, 幹郎× 吉江, 徹× 土方, 泰斗× 大島, 武× 武山 昭憲× 松田 拓磨× 三友 啓× 村田 航一× 牧野 高紘× 小野田 忍× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The response of hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) to gamma-ray irradiation was investigated under elevated temperature and humid conditions. The shift in drain current–gate voltage (ID–VG) curves towards negative voltages and the leakage of ID with a current hump due to elevated temperature irradiation were suppressed under high humidity conditions relative to dry conditions. This result can be explained in terms of the reduction in trapped oxide charge and oxide–SiC interface traps generated by irradiation due to the humid conditions. In addition, during irradiation at elevated temperature in humid conditions, electron traps at the oxide–SiC interface obviously decrease at doses above 100 kGy. |
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| 書誌情報 |
Japanese Journal of Applied Physics 巻 55, 号 10, p. 104101-1-104101-4, 発行日 2016-09 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/JJAP.55.104101 | |||||
