{"created":"2023-05-15T14:36:57.554352+00:00","id":47627,"links":{},"metadata":{"_buckets":{"deposit":"88887e4f-2a56-4c06-9a14-b164bb957bfc"},"_deposit":{"created_by":1,"id":"47627","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47627"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047627","sets":["1"]},"author_link":["477478","477484","477469","477487","477477","477479","477480","477486","477473","477475","477483","477485","477470","477471","477472","477482","477476","477468","477474","477481"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"104101-4","bibliographicPageStart":"104101-1","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The response of hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) to gamma-ray irradiation\nwas investigated under elevated temperature and humid conditions. The shift in drain current–gate voltage (ID–VG) curves towards negative\nvoltages and the leakage of ID with a current hump due to elevated temperature irradiation were suppressed under high humidity conditions relative\nto dry conditions. This result can be explained in terms of the reduction in trapped oxide charge and oxide–SiC interface traps generated by\nirradiation due to the humid conditions. In addition, during irradiation at elevated temperature in humid conditions, electron traps at the oxide–SiC\ninterface obviously decrease at doses above 100 kGy.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/JJAP.55.104101","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"477468","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松田, 拓磨"}],"nameIdentifiers":[{"nameIdentifier":"477469","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"横関, 貴史"}],"nameIdentifiers":[{"nameIdentifier":"477470","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三友, 啓"}],"nameIdentifiers":[{"nameIdentifier":"477471","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村田, 航一"}],"nameIdentifiers":[{"nameIdentifier":"477472","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"477473","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田, 忍"}],"nameIdentifiers":[{"nameIdentifier":"477474","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大久保, 秀一"}],"nameIdentifiers":[{"nameIdentifier":"477475","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 雄季"}],"nameIdentifiers":[{"nameIdentifier":"477476","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"神取, 幹郎"}],"nameIdentifiers":[{"nameIdentifier":"477477","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"吉江, 徹"}],"nameIdentifiers":[{"nameIdentifier":"477478","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"477479","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"477480","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477481","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松田 拓磨","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477482","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三友 啓","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477483","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村田 航一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477484","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477485","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477486","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477487","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-01-30"},"publish_date":"2017-01-30","publish_status":"0","recid":"47627","relation_version_is_last":true,"title":["Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:37:27.242463+00:00"}