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Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation
https://repo.qst.go.jp/records/47593
https://repo.qst.go.jp/records/47593d2e4c9de-fadb-42ce-84b3-488819226cef
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-12-15 | |||||
タイトル | ||||||
タイトル | Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Ishii, Satoshi
× Ishii, Satoshi× Yabe, Daisuke× Enomoto, Shotaro× Koshio, Shigeru× Konishi, Teruaki× Hamano, Tsuyoshi× Hirao, Toshio× 小西 輝昭× 濱野 毅 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after 60Co gamma irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage (Vth) shift towards positive gate voltages in the drain current–gate voltage (ID–VGS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the ID–VGS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total dosage up to 50 kGy; it instead generates charge traps near the CNT/SiO2 gate insulator interfaces. These traps are located within the SiO2 layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO2 interface contribute less to the Vth shift than the interface dipoles at the CNT/metal electrode interfaces below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy. | |||||
書誌情報 |
Physica E: Low-dimensional Systems and Nanostructures 巻 86, p. 297-302, 発行日 2016-10 |
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出版者 | ||||||
出版者 | Elsevier B.V. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1386-9477 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.physe.2016.10.025 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.sciencedirect.com/science/article/pii/S1386947716303356 | |||||
関連名称 | http://www.sciencedirect.com/science/article/pii/S1386947716303356 |