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  1. 原著論文

Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation

https://repo.qst.go.jp/records/47593
https://repo.qst.go.jp/records/47593
d2e4c9de-fadb-42ce-84b3-488819226cef
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-15
タイトル
タイトル Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Ishii, Satoshi

× Ishii, Satoshi

WEKO 477047

Ishii, Satoshi

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Yabe, Daisuke

× Yabe, Daisuke

WEKO 477048

Yabe, Daisuke

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Enomoto, Shotaro

× Enomoto, Shotaro

WEKO 477049

Enomoto, Shotaro

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Koshio, Shigeru

× Koshio, Shigeru

WEKO 477050

Koshio, Shigeru

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Konishi, Teruaki

× Konishi, Teruaki

WEKO 477051

Konishi, Teruaki

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Hamano, Tsuyoshi

× Hamano, Tsuyoshi

WEKO 477052

Hamano, Tsuyoshi

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Hirao, Toshio

× Hirao, Toshio

WEKO 477053

Hirao, Toshio

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小西 輝昭

× 小西 輝昭

WEKO 477054

en 小西 輝昭

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濱野 毅

× 濱野 毅

WEKO 477055

en 濱野 毅

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抄録
内容記述タイプ Abstract
内容記述 We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after 60Co gamma irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage (Vth) shift towards positive gate voltages in the drain current–gate voltage (ID–VGS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the ID–VGS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total dosage up to 50 kGy; it instead generates charge traps near the CNT/SiO2 gate insulator interfaces. These traps are located within the SiO2 layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO2 interface contribute less to the Vth shift than the interface dipoles at the CNT/metal electrode interfaces below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.
書誌情報 Physica E: Low-dimensional Systems and Nanostructures

巻 86, p. 297-302, 発行日 2016-10
出版者
出版者 Elsevier B.V.
ISSN
収録物識別子タイプ ISSN
収録物識別子 1386-9477
DOI
識別子タイプ DOI
関連識別子 10.1016/j.physe.2016.10.025
関連サイト
識別子タイプ URI
関連識別子 http://www.sciencedirect.com/science/article/pii/S1386947716303356
関連名称 http://www.sciencedirect.com/science/article/pii/S1386947716303356
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