@article{oai:repo.qst.go.jp:00047593,
 author = {Ishii, Satoshi and Yabe, Daisuke and Enomoto, Shotaro and Koshio, Shigeru and Konishi, Teruaki and Hamano, Tsuyoshi and Hirao, Toshio and 小西 輝昭 and 濱野 毅},
 journal = {Physica E: Low-dimensional Systems and Nanostructures},
 month = {Oct},
 note = {We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after 60Co gamma irradiation up to 50 kGy in an air environment.  When the total dose is increased, the degree of the threshold voltage (Vth) shift towards positive gate voltages in the drain current–gate voltage (ID–VGS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy.  From our analysis of the ID–VGS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total dosage up to 50 kGy; it instead generates charge traps near the CNT/SiO2 gate insulator interfaces.  These traps are located within the SiO2 layer and/or the adsorbate on the device surface.  The positively charged traps near the CNT/SiO2 interface contribute less to the Vth shift than the interface dipoles at the CNT/metal electrode interfaces below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy.  Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.},
 pages = {297--302},
 title = {Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation},
 volume = {86},
 year = {2016}
}