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Investigation of Single-Event Damages on Silicon Carbide (SiC) power MOSFETs
https://repo.qst.go.jp/records/47188
https://repo.qst.go.jp/records/471883f670fa7-9035-47be-8a51-69b71a32f531
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2015-07-23 | |||||
| タイトル | ||||||
| タイトル | Investigation of Single-Event Damages on Silicon Carbide (SiC) power MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Mizuta, E.
× Mizuta, E.× Kuboyama, S.× Abe, H.× Iwata, Y.× al., et× 水田 栄一× 久保山 智司× 岩田 佳之 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Abstract—Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current increase just before SEBs. The phenomenon is unique for SiC devices. | |||||
| 書誌情報 |
IEEE Transactions on Nuclear Science 巻 61, 号 4, p. 1924-1928, 発行日 2014-08 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0018-9499 | |||||
