@article{oai:repo.qst.go.jp:00047188,
 author = {Mizuta, E. and Kuboyama, S. and Abe, H. and Iwata, Y. and al., et and 水田 栄一 and 久保山 智司 and 岩田 佳之},
 issue = {4},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Aug},
 note = {Abstract—Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current increase just before SEBs. The phenomenon is unique for SiC devices.},
 pages = {1924--1928},
 title = {Investigation of Single-Event Damages on Silicon Carbide (SiC) power MOSFETs},
 volume = {61},
 year = {2014}
}