| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-01-25 |
| タイトル |
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タイトル |
Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Keita Tachiki
Yusuke Nishiya
Jun-Ichi Iwata
Matsushita Yuichiro
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO2 interface when nitrogen is introduced as a dopant within a few nm of the SiC surface. When a highly doped nitrogen layer (5 × 1019 cm?3) is introduced within a few nm of the SiC(11overline 20) surface, the electronic state is not significantly affected if the doping region is less than 4 nm. However, if the doping region exceeds 4 nm, the effect of quantum confinement decreases, which increases the electron density induced in the inversion layer. As for the wavefunction, even when an electric field is applied, the peak shifts toward the direction in which the electrons are pulled away from the interface. This reduces the effect of electron scattering at the interface and improves electron mobility. |
| 書誌情報 |
Japanese Journal of Applied Physics
巻 62,
p. 061005-1-061005-7,
発行日 2023-06
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.35848/1347-4065/acd9ff |
