{"created":"2025-08-15T04:40:04.198469+00:00","id":2000997,"links":{},"metadata":{"_buckets":{"deposit":"1c6613d0-c92c-4e19-8316-79288afc4a3d"},"_deposit":{"created_by":9,"id":"2000997","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2000997"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:02000997","sets":["1"]},"author_link":[],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2023-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"061005-7","bibliographicPageStart":"061005-1","bibliographicVolumeNumber":"62","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO2 interface when nitrogen is introduced as a dopant within a few nm of the SiC surface. When a highly doped nitrogen layer (5 × 1019 cm?3) is introduced within a few nm of the SiC(11overline 20) surface, the electronic state is not significantly affected if the doping region is less than 4 nm. However, if the doping region exceeds 4 nm, the effect of quantum confinement decreases, which increases the electron density induced in the inversion layer. As for the wavefunction, even when an electric field is applied, the peak shifts toward the direction in which the electrons are pulled away from the interface. This reduces the effect of electron scattering at the interface and improves electron mobility.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.35848/1347-4065/acd9ff","subitem_relation_type_select":"DOI"}}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Keita Tachiki"}]},{"creatorNames":[{"creatorName":"Yusuke Nishiya"}]},{"creatorNames":[{"creatorName":"Jun-Ichi Iwata"}]},{"creatorNames":[{"creatorName":"Matsushita Yuichiro"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation","subitem_title_language":"en"}]},"item_type_id":"8","owner":"9","path":["1"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-01-25"},"publish_date":"2024-01-25","publish_status":"0","recid":"2000997","relation_version_is_last":true,"title":["Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-10-16T02:48:37.661075+00:00"}