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Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions
https://repo.qst.go.jp/records/85652
https://repo.qst.go.jp/records/8565226b1ef33-9b9c-4ea7-858e-a020a61f43ac
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-10-25 | |||||
タイトル | ||||||
タイトル | Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kazumasa, Narumi
× Kazumasa, Narumi× Hiroshi, Naramoto× Keisuke, Yamada× Atsuya, Chiba× Yuuichi, Saito× Kazumasa, Narumi× Hiroshi, Naramoto× Keisuke, Yamada× Atsuya, Chiba× Yuuichi, Saito |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Sputtering yields of Si have been measured for C60 ions in the energy range from 10 to 540 keV, where the nuclear stopping is dominant, by measuring thickness change of a pre-amorphized layer with conventional Rutherford-backscattering spectroscopy. The measured sputtering yield shows the maximum, which is approximately 600 Si/C60, around 100 keV. Comparing with the sputtering yields for a monatomic ion calculated both based on the linear-collision-cascade theory of Sigmund and using the SRIM2008 code, nonlinear effect on the sputtering yield has been observed. The nonlinear effect depends on the energy of C60 ions: it is very large around the energies where the sputtering yield has the maximum and hardly observed at 10 keV. | |||||
書誌情報 |
Quantum Beam Science 巻 6, 号 1, p. 12, 発行日 2022-03 |
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出版者 | ||||||
出版者 | MDPI | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2412-382X | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.3390/qubs6010012 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.mdpi.com/2412-382X/6/1/12 |