{"created":"2023-05-15T15:03:13.818599+00:00","id":85652,"links":{},"metadata":{"_buckets":{"deposit":"153e405a-0280-42bf-b3e2-0febc9b57fe2"},"_deposit":{"created_by":1,"id":"85652","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85652"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085652","sets":["1"]},"author_link":["1031032","1031037","1031030","1031028","1031035","1031031","1031029","1031034","1031036","1031033"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"12","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"Quantum Beam Science"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Sputtering yields of Si have been measured for C60 ions in the energy range from 10 to 540 keV, where the nuclear stopping is dominant, by measuring thickness change of a pre-amorphized layer with conventional Rutherford-backscattering spectroscopy. The measured sputtering yield shows the maximum, which is approximately 600 Si/C60, around 100 keV. Comparing with the sputtering yields for a monatomic ion calculated both based on the linear-collision-cascade theory of Sigmund and using the SRIM2008 code, nonlinear effect on the sputtering yield has been observed. The nonlinear effect depends on the energy of C60 ions: it is very large around the energies where the sputtering yield has the maximum and hardly observed at 10 keV.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.3390/qubs6010012","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.mdpi.com/2412-382X/6/1/12","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2412-382X","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kazumasa, Narumi"}],"nameIdentifiers":[{"nameIdentifier":"1031028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiroshi, Naramoto"}],"nameIdentifiers":[{"nameIdentifier":"1031029","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Keisuke, Yamada"}],"nameIdentifiers":[{"nameIdentifier":"1031030","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsuya, Chiba"}],"nameIdentifiers":[{"nameIdentifier":"1031031","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuuichi, Saito"}],"nameIdentifiers":[{"nameIdentifier":"1031032","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kazumasa, Narumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1031033","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiroshi, Naramoto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1031034","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Keisuke, Yamada","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1031035","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsuya, Chiba","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1031036","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuuichi, Saito","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1031037","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-10-25"},"publish_date":"2021-10-25","publish_status":"0","recid":"85652","relation_version_is_last":true,"title":["Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:41:49.327166+00:00"}