@article{oai:repo.qst.go.jp:00085652,
 author = {Kazumasa, Narumi and Hiroshi, Naramoto and Keisuke, Yamada and Atsuya, Chiba and Yuuichi, Saito and Kazumasa, Narumi and Hiroshi, Naramoto and Keisuke, Yamada and Atsuya, Chiba and Yuuichi, Saito},
 issue = {1},
 journal = {Quantum Beam Science},
 month = {Mar},
 note = {Sputtering yields of Si have been measured for C60 ions in the energy range from 10 to 540 keV, where the nuclear stopping is dominant, by measuring thickness change of a pre-amorphized layer with conventional Rutherford-backscattering spectroscopy. The measured sputtering yield shows the maximum, which is approximately 600 Si/C60, around 100 keV. Comparing with the sputtering yields for a monatomic ion calculated both based on the linear-collision-cascade theory of Sigmund and using the SRIM2008 code, nonlinear effect on the sputtering yield has been observed. The nonlinear effect depends on the energy of C60 ions: it is very large around the energies where the sputtering yield has the maximum and hardly observed at 10 keV.},
 title = {Sputtering Yields of Si Bombarded with 10-540-keV C60 Ions},
 volume = {6},
 year = {2022}
}