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  1. 原著論文

Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

https://repo.qst.go.jp/records/84898
https://repo.qst.go.jp/records/84898
86a99e60-3e78-4126-9d16-dcc081fd40aa
Item type 学術雑誌論文 / Journal Article(1)
公開日 2022-02-10
タイトル
タイトル Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Yuta, Abe

× Yuta, Abe

WEKO 1040989

Yuta, Abe

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Akifumi, Chaen

× Akifumi, Chaen

WEKO 1040990

Akifumi, Chaen

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Sometani, Mitsuru

× Sometani, Mitsuru

WEKO 1040991

Sometani, Mitsuru

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Harada, Shinsuke

× Harada, Shinsuke

WEKO 1040992

Harada, Shinsuke

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Yuichi, Yamazaki

× Yuichi, Yamazaki

WEKO 1040993

Yuichi, Yamazaki

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1040994

Takeshi, Ohshima

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Umeda, Takehide

× Umeda, Takehide

WEKO 1040995

Umeda, Takehide

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Yuta, Abe

× Yuta, Abe

WEKO 1040996

en Yuta, Abe

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Akifumi, Chaen

× Akifumi, Chaen

WEKO 1040997

en Akifumi, Chaen

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Yuichi, Yamazaki

× Yuichi, Yamazaki

WEKO 1040998

en Yuichi, Yamazaki

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1040999

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology. In particular, neutral divacancies (the P6/P7centers, VSiVC 0) and a certain type of silicon vacancies (the TV2a center, VSi - at the k site) are promising for addressing and manipulating single spins. Although the TV2a spin is readable at room temperature, the readout techniques have been limited to luminescence-based ones (e.g., optically detected magnetic resonance). In this study, we demonstrated electrical detection of TV2a-type silicon vacancies at room temperature by using electrically detected magnetic resonance on 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). TV2a spin defects were embedded in the channel region of well-defined 4H-SiC MOSFETs via controlled proton irradiation. The number of detected TV2a spins was estimated to be 10^5. We also found that the charge state of the TV2a
spin defect can be controlled by varying the gate voltage applied to the MOSFET.
書誌情報 Applied Physics Letters

巻 120, p. 064001-1, 発行日 2022-02
出版者
出版者 AIP publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0003-6951
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0078189
関連サイト
識別子タイプ URI
関連識別子 https://aip.scitation.org/doi/full/10.1063/5.0078189
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