@article{oai:repo.qst.go.jp:00084898,
 author = {Yuta, Abe and Akifumi, Chaen and Sometani, Mitsuru and Harada, Shinsuke and Yuichi, Yamazaki and Takeshi, Ohshima and Umeda, Takehide and Yuta, Abe and Akifumi, Chaen and Yuichi, Yamazaki and Takeshi, Ohshima},
 journal = {Applied Physics Letters},
 month = {Feb},
 note = {Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology. In particular, neutral divacancies (the P6/P7centers, VSiVC 0) and a certain type of silicon vacancies (the TV2a center, VSi - at the k site) are promising for addressing and manipulating single spins. Although the TV2a spin is readable at room temperature, the readout techniques have been limited to luminescence-based ones (e.g., optically detected magnetic resonance). In this study, we demonstrated electrical detection of TV2a-type silicon vacancies at room temperature by using electrically detected magnetic resonance on 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). TV2a spin defects were embedded in the channel region of well-defined 4H-SiC MOSFETs via controlled proton irradiation. The number of detected TV2a spins was estimated to be 10^5. We also found that the charge state of the TV2a
spin defect can be controlled by varying the gate voltage applied to the MOSFET.},
 title = {Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs},
 volume = {120},
 year = {2022}
}