{"created":"2023-05-15T15:02:36.920130+00:00","id":84898,"links":{},"metadata":{"_buckets":{"deposit":"04f54b83-dfbf-41ea-a322-9e53902884e2"},"_deposit":{"created_by":1,"id":"84898","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"84898"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00084898","sets":["1"]},"author_link":["1040995","1040996","1040998","1040991","1040999","1040994","1040989","1040997","1040993","1040992","1040990"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-02","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"064001-1","bibliographicVolumeNumber":"120","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology. In particular, neutral divacancies (the P6/P7centers, VSiVC 0) and a certain type of silicon vacancies (the TV2a center, VSi - at the k site) are promising for addressing and manipulating single spins. Although the TV2a spin is readable at room temperature, the readout techniques have been limited to luminescence-based ones (e.g., optically detected magnetic resonance). In this study, we demonstrated electrical detection of TV2a-type silicon vacancies at room temperature by using electrically detected magnetic resonance on 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). TV2a spin defects were embedded in the channel region of well-defined 4H-SiC MOSFETs via controlled proton irradiation. The number of detected TV2a spins was estimated to be 10^5. We also found that the charge state of the TV2a\nspin defect can be controlled by varying the gate voltage applied to the MOSFET.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/5.0078189","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://aip.scitation.org/doi/full/10.1063/5.0078189","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yuta, Abe"}],"nameIdentifiers":[{"nameIdentifier":"1040989","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akifumi, Chaen"}],"nameIdentifiers":[{"nameIdentifier":"1040990","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sometani, Mitsuru"}],"nameIdentifiers":[{"nameIdentifier":"1040991","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Harada, Shinsuke"}],"nameIdentifiers":[{"nameIdentifier":"1040992","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki"}],"nameIdentifiers":[{"nameIdentifier":"1040993","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1040994","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeda, Takehide"}],"nameIdentifiers":[{"nameIdentifier":"1040995","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Abe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1040996","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akifumi, Chaen","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1040997","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1040998","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1040999","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-02-10"},"publish_date":"2022-02-10","publish_status":"0","recid":"84898","relation_version_is_last":true,"title":["Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:24:10.397278+00:00"}