WEKO3
アイテム
Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide
https://repo.qst.go.jp/records/81766
https://repo.qst.go.jp/records/8176665f35dff-e248-4354-af81-6314c04a15a4
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-02-03 | |||||
| タイトル | ||||||
| タイトル | Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takuma, Narahara
× Takuma, Narahara× Shinichiro, Sato× Kojima, Kazutoshi× Hijikata, Yasuto× Takeshi, Ohshima× Takuma, Narahara× Shinichiro, Sato× Takeshi, Ohshima |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NCVSi− centers suddenly appears above the fluence of 5.0 × 1015 cm−2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage. | |||||
| 書誌情報 |
Applied Physics Express 巻 14, 号 2, p. 021004, 発行日 2021-02 |
|||||
| 出版者 | ||||||
| 出版者 | IOP Science | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1882-0778 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.35848/1882-0786/abdc9e | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.35848/1882-0786/abdc9e | |||||
