@article{oai:repo.qst.go.jp:00081766,
 author = {Takuma, Narahara and Shinichiro, Sato and Kojima, Kazutoshi and Hijikata, Yasuto and Takeshi, Ohshima and Takuma, Narahara and Shinichiro, Sato and Takeshi, Ohshima},
 issue = {2},
 journal = {Applied Physics Express},
 month = {Feb},
 note = {Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NCVSi− centers suddenly appears above the fluence of 5.0 × 1015 cm−2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.},
 title = {Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide},
 volume = {14},
 year = {2021}
}