{"created":"2023-05-15T15:00:15.002796+00:00","id":81766,"links":{},"metadata":{"_buckets":{"deposit":"166b66fb-4ad3-4355-be39-936b5554cf46"},"_deposit":{"created_by":1,"id":"81766","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"81766"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00081766","sets":["1"]},"author_link":["1007902","1007905","1007906","1007901","1007900","1007899","1007903","1007904"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageStart":"021004","bibliographicVolumeNumber":"14","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NCVSi− centers suddenly appears above the fluence of 5.0 × 1015 cm−2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Science"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.35848/1882-0786/abdc9e","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://iopscience.iop.org/article/10.35848/1882-0786/abdc9e","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takuma, Narahara"}],"nameIdentifiers":[{"nameIdentifier":"1007899","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato"}],"nameIdentifiers":[{"nameIdentifier":"1007900","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi"}],"nameIdentifiers":[{"nameIdentifier":"1007901","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"1007902","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1007903","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takuma, Narahara","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1007904","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1007905","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1007906","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-02-03"},"publish_date":"2021-02-03","publish_status":"0","recid":"81766","relation_version_is_last":true,"title":["Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:14:14.113316+00:00"}